Area-selective atomic layer deposition of TiN using aromatic inhibitor molecules for metal/dielectric selectivity
MJM Merkx, S Vlaanderen, T Faraz… - Chemistry of …, 2020 - ACS Publications
Despite the rapid increase in the number of newly developed processes, area-selective
atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low …
atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low …
Mechanism of premature etch stop in high-density magnetic-tunnel-junction patterning using CO/NH3 plasma with Ta mask
M Satake, M Yamada, K Yokogawa - Journal of Vacuum Science & …, 2020 - pubs.aip.org
We investigated the mechanism of premature etch stop in magnetic tunnel junction (MTJ)
patterning using CO/NH 3 plasma with a Ta mask to clarify the cause of etch-stop problem in …
patterning using CO/NH 3 plasma with a Ta mask to clarify the cause of etch-stop problem in …