S Acikgoz, H Yungevis - Applied Physics A, 2020 - Springer
Hexagonal prisms with hexagonal pyramid end of Ga 2 O 3 microstructures were successfully prepared on gallium arsenide substrate by double cell electrochemical etching …
High-quality germanium epilayers on Si with low threading-dislocation density were achieved by sintering of porous Ge/Si films. The process consists in the formation of porous …
The use promising group III-V materials for photovoltaic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, we present …
The big concern with using silicon as a substrate for making Ge and III-V devices is the dislocation density in the epilayers. Dislocations degrade device performance by trapping …
V Diichuk, I Diichuk, I Winkler - Rev. Roum. Chim, 2020 - revroum.lew.ro
The state of the semiconducting monocrystal's surface is one of the key factors determining its electrophysical characteristics. It is known that the compositions “semiconductor/oxide,”“ …