Designer atomic layer etching
KJ Kanarik - US Patent 10,566,212, 2020 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …
materials to determine process conditions for self-limiting etching by atomic layer etching are …
Atomic layer etch, reactive precursors and energetic sources for patterning applications
Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
Methods and apparatuses for etching semiconductor material on substrates using atomic
layer etching by chemisorption, by deposition, or by both chemisorption and deposition …
layer etching by chemisorption, by deposition, or by both chemisorption and deposition …
Selective deposition with atomic layer etch reset
Methods are provided for conducting a deposition on a semiconductor substrate by
selectively depositing a material on the substrate. The substrate has a plurality of substrate …
selectively depositing a material on the substrate. The substrate has a plurality of substrate …
Cobalt etch back
Methods of etching cobalt on substrates are provided. Some methods involve exposing the
substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …
substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …
Atomic layer etching of tantalum
KJ Kanarik, KIM Taeseung - US Patent 10,566,213, 2020 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …
materials to determine process conditions for self-limiting etching by atomic layer etching are …
Etching substrates using ALE and selective deposition
Methods of and apparatuses for processing substrates having carbon-containing material
using atomic layer etch and selective deposition are provided. Methods involve exposing a …
using atomic layer etch and selective deposition are provided. Methods involve exposing a …
Dry plasma etch method to pattern MRAM stack
S Tan, KIM Taeseung, W Yang, J Marks… - US Patent 10,749,103, 2020 - Google Patents
Apparatuses for etching metal by depositing a material reactive with a metal to be etched
and a halogen to form a volatile species and exposing the substrate to a halogen-containing …
and a halogen to form a volatile species and exposing the substrate to a halogen-containing …
Control of directionality in atomic layer etching
5,411,631 A 5/1995 Hori et¿ 1, 5,501.893 A 3/1996 Laermer et al. 6,022,806 A 2/2000 Sato
et al. 6,083,413 A 7/2000 Sawub et al. 6.177. 353 B1 1/2001 Gutsche et al. 6,448, 192 B1 …
et al. 6,083,413 A 7/2000 Sawub et al. 6.177. 353 B1 1/2001 Gutsche et al. 6,448, 192 B1 …
Method for manufacturing magnetic tunnel junction element, and inductively coupled plasma processing apparatus
M Yamada - US Patent 10,833,255, 2020 - Google Patents
There is provided a method for manufacturing a magnetic tunnel junction element which
prevents properties degradation due to hydrogen ions, and to which RIE processing that is …
prevents properties degradation due to hydrogen ions, and to which RIE processing that is …