Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Synergistic Hybrid Support Comprising TiO2–Carbon and Ordered PdNi Alloy for Direct Hydrogen Peroxide Synthesis
The development of high-activity catalysts with good selectivity for the direct synthesis of
H2O2 from H2 and O2 remains challenging. TiO2–C used as a support material is able to …
H2O2 from H2 and O2 remains challenging. TiO2–C used as a support material is able to …
Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device
The recent observation of stable quantized conductance in anatase TiO2 resistive random
access memory (ReRAM) devices opens up a new pathway toward the realization of brain …
access memory (ReRAM) devices opens up a new pathway toward the realization of brain …
All‐Solid‐State Electro‐Chemo‐Mechanical Actuator Operating at Room Temperature
Dimensional change in a solid due to electrochemically driven compositional change is
termed electro‐chemo‐mechanical (ECM) coupling. This effect causes mechanical …
termed electro‐chemo‐mechanical (ECM) coupling. This effect causes mechanical …
[HTML][HTML] Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles
S Kwon, MJ Kim, KB Chung - Scientific Reports, 2021 - nature.com
TiOx-based resistive switching devices have recently attracted attention as a promising
candidate for next-generation non-volatile memory devices. A number of studies have …
candidate for next-generation non-volatile memory devices. A number of studies have …
Structural properties and surface oxidation states of sputter‐deposited TiO2−x thin films
Titanium dioxide (TiO2− x) films were deposited on silicon (100) substrates from pure
titanium (Ti) targets using direct current magnetron sputtering technique. TiO2− x thin films …
titanium (Ti) targets using direct current magnetron sputtering technique. TiO2− x thin films …
Ag nanoparticles capped TiO2 nanowires array based capacitive memory
Glancing angle deposition technique was used to fabricate Ag nanoparticles (NPs) capped
TiO2 Nanowire (NW) array structure for capacitive memory application. Electron …
TiO2 Nanowire (NW) array structure for capacitive memory application. Electron …
Co0. 5TiOPO4@ C as new negative electrode for sodium ion batteries: Synthesis, characterization, and elucidation of the electrochemical mechanism using in …
A Nassiri, N Sabi, A Sarapulova, S Indris… - Journal of Power …, 2021 - Elsevier
The synthesis/coating of the negative electrode material Co 0.5 TiOPO 4@ C, and its
characterization in terms of morphology, crystallographic parameters and electrochemical …
characterization in terms of morphology, crystallographic parameters and electrochemical …