Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1− xBix layers grown by Molecular Beam Epitaxy
Abstract Current-Voltage (IV), Capacitance-Voltage (CV), Deep Level Transient
Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman …
Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman …
The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure
The band line-up and band offset calculations of GaAs 0.978 Bi 0.022/GaAs single quantum
well with spatial changes of Bi composition were reported. The spatial Bi profile and a …
well with spatial changes of Bi composition were reported. The spatial Bi profile and a …
Structural and optical properties of n-type and p-type GaAs (1− x) Bi x thin films grown by molecular beam epitaxy on (311) B GaAs substrates
In this paper, we report on the structural and optical properties of n-type Si-doped and p-type
Be-doped GaAs (1− x) Bi x thin films grown by molecular beam epitaxy on (311) B GaAs …
Be-doped GaAs (1− x) Bi x thin films grown by molecular beam epitaxy on (311) B GaAs …
Diodinių struktūrų GaAsBi ir Bi kvantinių darinių pagrindu auginimas ir tyrimas
N Jurkūnas - 2021 - epublications.vu.lt
Abstract [eng] The last decade huge interest in devices, operating in telecommunication
wavelengths window (from 1 &# 956; m to 1.5 &# 956; m) was observed. Traditionally the …
wavelengths window (from 1 &# 956; m to 1.5 &# 956; m) was observed. Traditionally the …