The method relates to a method of forming an enhanced unexposed photoresist layer from
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …

D142, 841 S 2,410,420 A 2,563,931 A 2,660,061 A 2,745,640 A 2,990,045 A 3,038,951 A
3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …

A method for forming a forming a semiconductor structure is disclosed. The method may
include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon …

The disclosure relates to a sequential infiltration synthesis for treatment of infiltrateable
material. Examples of the disclosure provide a method of forming a structure that includes …

There is provided a method of forming a layer, comprising depositing a seed layer on the
substrate and depositing a bulk layer on the seed layer. Depositing the seed layer …

A substrate processing apparatus having improved uniformity and speed of reaction is
provided. A substrate processing apparatus includes a body portion comprising a discharge …

A plasma supply unit includes a first conductive portion, a second conductive portion having
at least a part extending to overlap the first conductive portion, and a ground shield located …

5,158,128 A D330, 900 S 5,167,716 A 5,176,451 A 5,178,682 A 5,181,779 A 5,183,511 A
5,192,717 A 5,194,401 A 5,199,603 A 5,213,650 A 5,221,556 A 5,225,366 A 5,226,383 A …

A reactor for processing substrates and methods for manufacturing and using the reactor are
disclosed. Specifically, the reactor can include a material that forms gas compounds. The …

(57) ABSTRACT A method for depositing a ruthenium-containing film on a substrate by a
cyclical deposition process is disclosed. The method may include: contacting the substrate …