Strained-layer quantum well materials grown by MOCVD for diode laser application
Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
GaAs/GaAsPBi core–shell nanowires grown by molecular beam epitaxy
We report on the growth, structural, and optical properties of GaAs/GaAsPBi core–shell
nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents …
nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents …
Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1− xBix layers grown by Molecular Beam Epitaxy
Abstract Current-Voltage (IV), Capacitance-Voltage (CV), Deep Level Transient
Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman …
Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman …
Structural and optical properties of n-type and p-type GaAs (1− x) Bi x thin films grown by molecular beam epitaxy on (311) B GaAs substrates
In this paper, we report on the structural and optical properties of n-type Si-doped and p-type
Be-doped GaAs (1− x) Bi x thin films grown by molecular beam epitaxy on (311) B GaAs …
Be-doped GaAs (1− x) Bi x thin films grown by molecular beam epitaxy on (311) B GaAs …