[HTML][HTML] Tertiary alkyl halides as growth activator and inhibitor for novel atomic layer deposition of low resistive titanium nitride
C Yeon, J Jung, H Byun, KC Tan, T Song, JH Kim… - AIP Advances, 2021 - pubs.aip.org
A novel atomic layer deposition (ALD) that utilizes tertiary alkyl (tert-alkyl) halides as both
growth activator and inhibitor is introduced and demonstrated for the deposition of a low …
growth activator and inhibitor is introduced and demonstrated for the deposition of a low …
Combining experimental and DFT investigation of the mechanism involved in thermal etching of titanium nitride using alternate exposures of NbF5 and CCl4, or CCl4 …
V Sharma, S Kondati Natarajan… - Advanced Materials …, 2021 - Wiley Online Library
Thermally activated chemical vapor‐phase etching of titanium nitride (TiN) is studied by
utilizing either alternate exposures of niobium pentafluoride (NbF5) and carbon tetrachloride …
utilizing either alternate exposures of niobium pentafluoride (NbF5) and carbon tetrachloride …
[HTML][HTML] Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2)
V Sharma, T Blomberg, S Haukka, S Cembella… - Applied Surface …, 2021 - Elsevier
In this work, thermal based gas-phase etching of titanium nitride (TiN) is demonstrated using
thionyl chloride (SOCl 2) as a novel etchant. A single etchant is utilised in a pulsed fashion …
thionyl chloride (SOCl 2) as a novel etchant. A single etchant is utilised in a pulsed fashion …