[HTML][HTML] Optimization of structure and electrical characteristics for four-layer vertically-stacked horizontal gate-all-around Si nanosheets devices
Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu, G Wang, J Yao… - Nanomaterials, 2021 - mdpi.com
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
Total-ionizing-dose response of highly scaled gate-all-around Si nanowire CMOS transistors
Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …
[PDF][PDF] Review of nanosheet transistors technology
Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the
channel on all direction. This new structure is earning extremely attention from research to …
channel on all direction. This new structure is earning extremely attention from research to …
On the CMOS device downsizing, more Moore, more than Moore, and more-than-Moore for more Moore
H Wong - 2021 IEEE 32nd International Conference on …, 2021 - ieeexplore.ieee.org
The progress of CMOS devices downsizing, either by shortening the gate-length/half-pitch
spacing or by folding the channel width, will be ended in a couple of generations. However …
spacing or by folding the channel width, will be ended in a couple of generations. However …
Narrow sub-fin technique for suppressing parasitic-channel effect in stacked nanosheet transistors
J Gu, Q Zhang, Z Wu, Y Luo, L Cao… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
A new approach of narrowing sub-fin with little extra process cost for suppressing parasitic-
channel-effect (PCE) on vertically-stacked horizontal gate-all-around (GAA) Si nanosheet …
channel-effect (PCE) on vertically-stacked horizontal gate-all-around (GAA) Si nanosheet …
OCD enhanced: implementation and validation of spectral interferometry for nanosheet inner spacer indentation
D Schmidt, C Durfee, S Pancharatnam… - … Process Control for …, 2021 - spiedigitallibrary.org
In this work, the novel enhancement to multichannel scatterometry data collection, Spectral
Interferometry, is introduced and discussed. The Spectral Interferometry technology adds …
Interferometry, is introduced and discussed. The Spectral Interferometry technology adds …
[PDF][PDF] Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices., 2021, 11, 646
Q Zhang, J Gu, R Xu, L Cao, J Li… - DOI: https://doi. org …, 2021 - pdfs.semanticscholar.org
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
Total-Ionizing-Dose Effects, Low-Frequency Noise, and Random Telegraph Noise of MOSFETs with Advanced Architectures
M Gorchichko - 2021 - ir.vanderbilt.edu
In this dissertation, the basic mechanisms of total-ionizing-dose (TID) responses of Gate-All-
Around (GAA) FETs and Charge-Trap Transistors (CTT) with FinFET architecture are …
Around (GAA) FETs and Charge-Trap Transistors (CTT) with FinFET architecture are …
НОВЕЙШИЙ ТЕХНОЛОГИЧЕСКИЙ ПРОЦЕСС IBM
ЕВ Моргунов - МИКРОЭЛЕКТРОНИКА И НАНОЭЛЕКТРОНИКА …, 2021 - elibrary.ru
Обзорная статья посвящена ознакомлению и краткому анализу последнего поколения
чипов производства компании IBM. Ключевой особенностью рассматриваемых чипов …
чипов производства компании IBM. Ключевой особенностью рассматриваемых чипов …