MeV-Fe ions implantation of GaAs–Induced morphological and structural modification of porous GaAs
W AL-Khoury, M Naddaf, M Ahmad - … in Physics Research Section B: Beam …, 2021 - Elsevier
Porous GaAs were formed by electrochemical etching of n-type GaAs (1 0 0) substrates
implanted by iron ion beam with energy of 2 MeV at low ion fluence of 7.8× 10+ 13 Fe++/cm …
implanted by iron ion beam with energy of 2 MeV at low ion fluence of 7.8× 10+ 13 Fe++/cm …
[PDF][PDF] Színesen mart ferrites acél vizsgálata spektroszkópiai ellipszometriával
Szabó Péter János 1992-ben szerzett villamosmérnöki oklevelet a Budapesti Műszaki
Egyetemen, majd 1995-ben PhD-fokozatot nagyfelbontású röntgen vonalprofil-analízis …
Egyetemen, majd 1995-ben PhD-fokozatot nagyfelbontású röntgen vonalprofil-analízis …
A Structural and Optical Look at Functional Materials
MK Ozturk - Advances in Optoelectronic Materials, 2021 - Springer
This chapter is an introductory chapter which presents overviews of the main methods in
analyzing, producing, and characterizing functional materials. A brief idea about deducing …
analyzing, producing, and characterizing functional materials. A brief idea about deducing …
Effect of voided germanium thin-films grown onto silicon substrate on dislocations evolution
High-quality germanium (Ge) epilayers on silicon (Si) with low threading dislocation density
were achieved by sintering of porous Si/Ge films. The process consists of the formation of …
were achieved by sintering of porous Si/Ge films. The process consists of the formation of …