The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …

GaN-based high electron mobility transistors (HEMTs) are shown to have excellent
properties, showing themselves to perform well among the throng of solid-state power …

We have established that a design strategy for drain and gate connected field plates should
be adopted while keeping in mind the interplay of various charge sources across …

In this paper, the DC behavior of 6 nm gate length with Silicon (Si) and Silicon Dioxide
(SiO2) Heterojunction Electron Mobility Transistor with Double Decker Pi gate is analyzed …

Electric field in a device varies as it switches between ON and OFF states. These states have
different intensities of electric field and carrier density. The regions having high electric field …

This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility
transistors (HEMTs) by applying a slant-gate structure and drain-side extended field-plate …

This work demonstrates the improvement in DC and RF characteristics and a reduction in
the gate leakage current for thermally grown Nb 2 O 5 as a gate dielectric in AlGaN/GaN …

This work investigates the implications of field plate architectures on the power performance
of AlGaN/GaN HEMTs at Microwave X–Band. The spread of the output power across the …

This article proposes an inverting buck-boost drive (IBBD) gallium nitride (GaN) driver, which
directly drives depletion-mode GaN (D-GaN) metal–insulator–semiconductor high-electron …

In this paper, we compare the distortion and power characteristics between AlGaN/GaN high-
electron-mobility transistors (HEMTs) with different epi-structures. Third-order …