This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …

Over the past several years, stacked nanosheet gate-all-around (GAA) transistors captured
the focus of the semiconductor industry and have been identified as the lead architecture to …

In this paper, a comparative study on process variability considering work function variation
(WFV), random dopant fluctuation (RDF), and oxide thickness fluctuation (OTF) in epitaxial …

This work analyzes a set of Full Adder circuits considering variability effects, comparing
delay and energy consumption when operating at nominal voltage and near-threshold …

A drain current local variability compact model due to random fluctuation of channel length
induced by line edge roughness/line width roughness (LER/LWR) is derived here. The …