Carrier dynamics in (Ga, In)(Sb, Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range
We present experimental studies on low-temperature (T= 4.2 K) carrier dynamics in (Ga,
In)(Sb, Bi)/GaSb quantum wells (QWs) with the nominal In content of 3.7% and the Bi …
In)(Sb, Bi)/GaSb quantum wells (QWs) with the nominal In content of 3.7% and the Bi …
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
Abstract The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor
Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of …
Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of …
Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
A series of gallium arsenide bismide device layers covering a range of growth conditions are
thoroughly probed by low-temperature, power-dependent photoluminescence …
thoroughly probed by low-temperature, power-dependent photoluminescence …