Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation
The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …
distances were investigated using synchronously and asynchronously pulse modes in …
Influence of the carrier wafer during GaN etching in Cl2 plasma
T Meyer, C Petit-Etienne, E Pargon - Journal of Vacuum Science & …, 2022 - pubs.aip.org
In this study, we have performed a thorough characterization of the GaN surface after
etching up to 100 nm in Cl 2 plasma under various bias voltages and according to the carrier …
etching up to 100 nm in Cl 2 plasma under various bias voltages and according to the carrier …