A Padawer-Blatt, J Ducatel, M Korkusinski, A Bogan… - Physical Review B, 2022 - APS
Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Employing electric dipole spin resonance …
AK Verma, F Bopp, JJ Finley, B Jonas, A Zrenner… - Journal of Crystal …, 2022 - Elsevier
We report on a comparison of different In-deposition schemes to achieve low areal densities of self-assembled InAs quantum dots (QDs) on GaAs (1 0 0) via the Stranski-Krastanov …
Presenting a comprehensive overview of a rapidly burgeoning field blending solar cell technology with nanotechnology, the book covers topics such as solar cell basics …
A Rai, SSA Askari, MK Das, S Kumar - Micro and Nanostructures, 2022 - Elsevier
In this work, a mathematical model has been developed to analyze the effect of the number of quantum dot layers on the performance of solar cells. We have developed an analytical …
AV Babichev, SD Komarov, JS Tkach… - 2022 International …, 2022 - ieeexplore.ieee.org
We present the results on the formation and micro-photoluminescence studies of In 0.63 Ga 0.37 As/GaAs quantum dots grown by metal-organic vapour-phase epitaxy and molecular …
Epitaxially grown InAs quantum dots (QDs) have long been researched as a promising basis for qubits, and there have been numerous quantum operations proof-of-concept studies …
[en] Strain-driven self-assembled InAs quantum dots (QDs) on GaAs (100) substrates fabricated via the Stranski-Krastanov (SK) growth mode is evidently the most widely studied …