High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE
S Kundu, S Decoster, P Bezard… - … Applied Materials & …, 2022 - ACS Publications
InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated
for a broad range of applications such as high-resolution displays, high-density memories …
for a broad range of applications such as high-resolution displays, high-density memories …
Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation
The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …
distances were investigated using synchronously and asynchronously pulse modes in …
Time-resolved ion energy distribution in pulsed inductively coupled argon plasma with/without DC bias
Z Chen, J Blakeney, M Carruth, PLG Ventzek… - Journal of Vacuum …, 2022 - pubs.aip.org
Pulsed plasmas have emerged as promising candidates as a means for precise control of
ion energy/angle dependent surface processes and surface chemistry during the plasma …
ion energy/angle dependent surface processes and surface chemistry during the plasma …
(Digital Presentation) Characterization and Compression Technology of Real 3D Corner Residue Between Dummy Gate and Formed Fin During an Advanced …
X Xiao, Y Wang, B Su, X Ke, S Ji, HY Zhang - ECS Transactions, 2022 - iopscience.iop.org
3-Dimesional corner residue between Fin and gate bottom plays a key role in gate profile
definition and device performance, while the characterization and compression remain …
definition and device performance, while the characterization and compression remain …