Plasma atomic layer etching for titanium nitride at low temperatures
D Shim, J Kim, Y Kim, H Chae - … of Vacuum Science & Technology B, 2022 - pubs.aip.org
Isotropic plasma atomic layer etching (ALE) was developed for titanium nitride (TiN) through
a three-step process: plasma oxidation, plasma fluorination, and thermal removal at low …
a three-step process: plasma oxidation, plasma fluorination, and thermal removal at low …
Wet Chemical Processes for BEOL Technology
This chapter covers wet processes for logic back-end-of-the-line interconnect technology–
namely, wet cleans and wet etching (Sect. 6.1), electroplating (Sect. 6.2), and chemical …
namely, wet cleans and wet etching (Sect. 6.1), electroplating (Sect. 6.2), and chemical …