Toward attojoule switching energy in logic transistors
Advances in the theory of semiconductors in the 1930s in addition to the purification of
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …
A review of the gate-all-around nanosheet FET process opportunities
S Mukesh, J Zhang - Electronics, 2022 - mdpi.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
Design optimization of three-stacked nanosheet FET from self-heating effects perspective
Self-heating effect (SHE) is a severe issue arising in the nanoscale field-effect transistors
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …
Analysis of self-heating effects in multi-nanosheet FET considering bottom isolation and package options
C Yoo, J Chang, Y Seon, H Kim… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Self-heating effects (SHEs) of multi-nanosheet FET (mNS-FET) at the 3-nm technology node
were analyzed at the device and circuit level considering the introduction of punchthrough …
were analyzed at the device and circuit level considering the introduction of punchthrough …
A critical review on performance, reliability, and fabrication challenges in nanosheet FET for future analog/digital IC applications
This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
Review of nanosheet metrology opportunities for technology readiness
Over the past several years, stacked nanosheet gate-all-around (GAA) transistors captured
the focus of the semiconductor industry and have been identified as the lead architecture to …
the focus of the semiconductor industry and have been identified as the lead architecture to …
Novel trench inner-spacer scheme to eliminate parasitic bottom transistors in silicon nanosheet FETs
A novel and feasible trench inner-spacer (TIS) scheme to eliminate undesired parasitic
bottom transistors (trpbt) in gate-all-around (GAA) nanosheet (NS) field-effect transistors …
bottom transistors (trpbt) in gate-all-around (GAA) nanosheet (NS) field-effect transistors …
Forksheet FETs with bottom dielectric isolation, self-aligned gate cut, and isolation between adjacent source-drain structures
H Mertens, R Ritzenthaler, Y Oniki… - 2022 International …, 2022 - ieeexplore.ieee.org
We report on forksheet field-effect transistors that are isolated from the substrate by bottom
dielectric isolation (BDI) formed by replacing a SiGe epitaxial layer with a dielectric film while …
dielectric isolation (BDI) formed by replacing a SiGe epitaxial layer with a dielectric film while …
N-type nanosheet FETs without ground plane region for process simplification
KS Lee, JY Park - Micromachines, 2022 - mdpi.com
This paper proposes a simplified fabrication processing for nanosheet Field-Effect
Transistors (FETs) part of beyond-3-nm node technology. Formation of the ground plane …
Transistors (FETs) part of beyond-3-nm node technology. Formation of the ground plane …
Leakage optimization of the buried oxide substrate of nanosheet field-effect transistors
S Yoo, S Kim - IEEE Transactions on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, a new buried oxide nanosheet field-effect transistor (BO-NSFET) structure is
proposed for the first time as a strategy for improving the leakage of 3-nm stacked nanosheet …
proposed for the first time as a strategy for improving the leakage of 3-nm stacked nanosheet …