Formation of oxide crystallites on the porous GaAs surface by electrochemical deposition
Y Suchikova, S Kovachov… - Nanomaterials and …, 2022 - journals.sagepub.com
We demonstrate how the formation of octahedral microcrystals of arsenic oxide As2O3 in the
form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …
form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …
Controlled electrochemical growth of micro-scaled As2O3 and Ga2O3 oxide structures on p-type gallium arsenide
S Acikgoz, H Yungevis - Applied Physics A, 2022 - Springer
In this work, the double cell electrochemical etching technique is employed to study the
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …
[HTML][HTML] Analysis of structural and chemical inhomogeneity of thin films developed on ferrite grains by color etching with Beraha-I type etchant with spectroscopic …
JB Renkó, A Romanenko, PJ Szabó, A Sulyok… - Journal of Materials …, 2022 - Elsevier
The structural and chemical homogeneity of the developed thin film upon color etching a low-
carbon steel specimen with Beraha-I type color etchant was investigated by spectroscopic …
carbon steel specimen with Beraha-I type color etchant was investigated by spectroscopic …
Fabrication and characterisation of nitride DBRs and nitride membranes by electrochemical etching techniques
Y Tian - 2022 - etheses.whiterose.ac.uk
A Distributed Bragg Reflector (DBR) is an important component for semiconductor
microcavities and optoelectronic devices, such as vertical cavity surface emitting lasers …
microcavities and optoelectronic devices, such as vertical cavity surface emitting lasers …
Effect of Wafers Processing by Low Doses -Radiation on the Structure of Porous Layers GaAs
O Belobrovaya, V Polyanskaya, D Dugin… - … on Actual Problems …, 2022 - ieeexplore.ieee.org
The results of the study of the structure of gallium arsenide wafers and porous layers GaAs
by high-resolution X-ray diffraction (XRD) are discussed. The wafers GaAs were previously …
by high-resolution X-ray diffraction (XRD) are discussed. The wafers GaAs were previously …