Designer atomic layer etching
KJ Kanarik - US Patent 11,239,094, 2022 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …
materials to determine process conditions for self-limiting etching by atomic layer etching are …
Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
W Yang, T Mukherjee, M Brouri, S Tan, Y Pan… - US Patent …, 2022 - Google Patents
Etching a refractory metal or other high surface binding energy material on a substrate can
maintain or increase the smoothness of the metal/high EO surface, in some cases produce …
maintain or increase the smoothness of the metal/high EO surface, in some cases produce …
Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
D Shen, YJ Wang, RY Tong, V Sundar… - US Patent 11,316,103, 2022 - Google Patents
A process flow for forming magnetic tunnel junction (MTJ) nanopillars with minimal sidewall
residue and minimal sidewall damage is disclosed wherein a pattern is first formed in a hard …
residue and minimal sidewall damage is disclosed wherein a pattern is first formed in a hard …