SHARP: A short-word hierarchical accelerator for robust and practical fully homomorphic encryption

J Kim, S Kim, J Choi, J Park, D Kim… - Proceedings of the 50th …, 2023 - dl.acm.org
Fully homomorphic encryption (FHE) is an emerging cryptographic technology that
guarantees the privacy of sensitive user data by enabling direct computations on encrypted …

REED: Chiplet-based accelerator for fully homomorphic encryption

A Aikata, AC Mert, S Kwon, M Deryabin… - Cryptology ePrint …, 2023 - eprint.iacr.org
Abstract Fully Homomorphic Encryption (FHE) enables privacy-preserving computation and
has many applications. However, its practical implementation faces massive computation …

[HTML][HTML] A highly integrated nonvolatile bidirectional RFET with low leakage current

X Liu, M Li, S Zhang, X Jin - Heliyon, 2023 - cell.com
A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate
(SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the …

A majority logic synthesis framework for single flux quantum circuits

J Zhang, P Bogdan, S Nazarian - arXiv preprint arXiv:2301.10695, 2023 - arxiv.org
Exascale computing and its associated applications have required increasing degrees of
efficiency. Semiconductor-Transistor-based Circuits (STbCs) have struggled with increasing …

CiFHER: A Chiplet-Based FHE Accelerator with a Resizable Structure

S Kim, J Kim, J Choi, JH Ahn - arXiv preprint arXiv:2308.04890, 2023 - arxiv.org
Fully homomorphic encryption (FHE) is in the spotlight as a definitive solution for privacy, but
the high computational overhead of FHE poses a challenge to its practical adoption …

Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs

C Wang, H Yu, Y Wang, Z Zhang… - Science China …, 2023 - search.proquest.com
Due to its potential in low-power computing or storage applications, the HfO2-based
ferroelectric (FE) field-effect transistor (FET), which consists of a MOSFET and an FE gate …

The Research on the Fabrication of the Novel Basic Unit for 3D Structure Integrated Circuit

Y Liao, P Li, F Xu, C Peng, K Feng, R Nie… - Journal of Physics …, 2023 - iopscience.iop.org
The IC industry in the Chinese mainland has encountered the difficulty caused by the
embargo on lithography machines in developing state-of-the-art semiconductor IC …