Direct observation of oxygen dynamics in an oxide‐based second‐order memristor can
provide the valid evidence to clarify the memristive mechanism, however, which is still …

Capacitive-coupled memristive effect provides a favorable way for developing novel
multifunctional device since it simultaneously exhibits capacitive behavior and resistive …

Memristive devices for neuromorphic computing have been attracting ever growing attention
over the last couple of years. In neuromorphic electronics, memristive devices with multi …

Diffusive memristors demonstrate volatile resistive switching powered by the diffusion of
silver nanoparticles through the matrix of silicon dioxide. The equivalent circuit of the high …

This work focuses on the non‐zero‐crossing and open‐loop current–voltage (I–V)
characteristics of electronic memory devices that are studied and focused on primarily for …

Non-volatile memory devices have been getting significant attention from researchers
worldwide in recent years due to their application in resistive random access memory and …

The resistive switching phenomenon is attributed to local formation and rupture of
conductive filaments (CF), however some aspects of the switching mechanism still need …

We mimic bacterial learning and memory abilities in tungsten based two-sided single layers
of WSeO, WSeS, WSeSe, and WSeTe, where the thickness of the material represents the …

In this work, we have fabricated write-once-read-many (WORM) memory devices based on
the modification of the native aluminum oxide (AlOx) layer of the aluminum (Al) bottom …

In the present work CuS coated cotton thread was synthesized by co-precipitation method
with (WS) and without stirring effect (WOS). XRD and FESEM were used to analyze the …