Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin Film

G Gelineau, J Widiez, E Rolland… - Materials Science …, 2023 - Trans Tech Publ
The Smart CutTM process offers an advantageous opportunity to provide a large number of
performance-improved SiC substrates for power electronics. The crystalline quality and the …

GaSb band-structure models for electron density determinations from Raman measurements

MA Ochoa, JE Maslar, HS Bennett - Journal of applied physics, 2023 - pubs.aip.org
We investigate the use of Raman spectroscopy to measure carrier concentrations in n-type
GaSb epilayers to aid in the development of this technique for the nondestructive …

Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces

MV Lebedev, TV Lvova, AN Smirnov, VY Davydov… - Semiconductors, 2023 - Springer
Photoluminescence, Raman spectroscopy and X-ray photoelectron spectroscopy are used
to study electronic and atomic structure of n-InP (100) surfaces treated with different sulfide …

Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

AJE N'dohi, C Sonneville, S Saidi, TH Ngo, P De Mierry… - Crystals, 2023 - mdpi.com
In this work, the physical and the electrical properties of vertical GaN Schottky diodes were
investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current …

Analysis of InGaAs/InP pIn Photodiode Failed by Electrostatic Discharge

Y Ito, R Yokogawa, O Ueda, N Sawamoto, K Ide… - Journal of Electronic …, 2023 - Springer
Abstract We have evaluated InGaAs/InP PIN (pIn) photodiodes failed by electrostatic
discharge (ESD) with forward or reverse biasing, using scanning electron microscopy …