Roadmap of ferroelectric memories: From discovery to 3D integration
The versatility of hafnium oxide-based ferroelectric memories to function as a storage class
memory, a synaptic device for neuromorphic implementation, and a device capable of high …
memory, a synaptic device for neuromorphic implementation, and a device capable of high …
Raman scattering monitoring of thin film materials for atomic layer etching/deposition in the nano-semiconductor process integration
JB Kim, DS Kim, JS Kim, JH Choe, DW Ahn… - Chemical Physics …, 2023 - pubs.aip.org
According to Moore's law, the semiconductor industry is experiencing certain challenges in
terms of adapting to highly sophisticated integrated technology. Therefore, controlling …
terms of adapting to highly sophisticated integrated technology. Therefore, controlling …
Atomic Layer Etching Using a Novel Radical Generation Module
J Jung, K Kim - Materials, 2023 - mdpi.com
To fabricate miniature semiconductors of 10 nm or less, various process technologies have
reached their physical limits, and new process technologies for miniaturization are required …
reached their physical limits, and new process technologies for miniaturization are required …
[引用][C] Roadmap of Ferroelectric Memories: From Discovery to 3D Inte-gration
SDMLF Müller, YRDLA Sünbül…