Etching characteristics of TiN used as hard mask in dielectric etch process

[PDF] utexas.edu

Area selective atomic layer deposition, and vacuum ultraviolet enhanced annealing for next generation nanofabrication

X Yang - 2023 - repositories.lib.utexas.edu
Area selective atomic layer deposition (AS-ALD) of metals and metal oxides as well as
vacuum ultraviolet (VUV) enhanced annealing is presented as next generation …
相关文章