A quantum dot (QD) thin film of arsenic (III) oxide-hydroxide/polypyrrole (As2S3-As2O3/Ppy)
with a supernova-like shape has been developed for optoelectronic applications across a …

This study achieved the decoration of poly-3-methyl aniline (P3MA) with As2O3–As (OH) 3
using K2S2O8 and NaAsO2 on the 3-methyl aniline monomer. This resulted in a highly …

The primary objective of this research is to address the energy challenges by introducing an
innovative nanocomposite material. This material is designed to facilitate the conversion of …

Schottky diode of porous n-GaAs layers have been prepared by chemical etching of n-type
GaAs (100) substrates in (3 and 5) M of phosphoric acid (H3PO4) for 1 min. The influences …

In this article, a detailed study of the influence of the asymmetry parameter of the Pöschl–
Teller potential quantum wells (PTPQW) on the cyclotron resonance absorption (CRA) …

This research focuses on the synthesis of a new composite material, As 2 O 3-poly (1H-
pyrrole)(P1HP), for the generation of hydrogen gas. The novelty lies in the utilization of eco …

This study presents an express technology for the electrochemical etching of Gallium
Arsenide (GaAs) to form massive island pores. The n-type GaAs (Ill) single crystal plates are …

Controlled spalling is a promising low-cost substrate reuse technique for epitaxial growth
substrates; however, the spalling fracture produces large facets on (100)-oriented GaAs …

Elektrokimyasal aşındırma yöntemi ile altıgen çubuklar, mikro kristaller, homojen gözenekli
yapılar ve mikro yarık yapıları olmak üzere çeşitli üç boyutlu mikro ve nano yüzeyler n ve p …

1 We present the study of the n-GaAs surface modification by the electrochemical etching in
different electrolyte compositions. The possibility of forming the different micromorphology …