Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200 mm‐Diameter Wafers
T Kaltsounis, M El Amrani… - … status solidi (a), 2024 - Wiley Online Library
Localized epitaxy of gallium nitride (GaN) on silicon (Si) wafers is an efficient way to relax
elastically the tensile stress generated in the GaN layer after growth, allowing epitaxy of thick …
elastically the tensile stress generated in the GaN layer after growth, allowing epitaxy of thick …