Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations
Abstract Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to
the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice …
the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice …
Enhancing the performance of surface-textured Ge Schottky photodetectors using the electroless chemical etching method
M Zumuukhorol, S Boldbaatar, Z Khurelbaatar… - Materials Science in …, 2024 - Elsevier
We employed a technique to enhance the performance of Ge Schottky photodetectors (PDs),
namely using an electroless chemical etching method to create an antireflective surface …
namely using an electroless chemical etching method to create an antireflective surface …
Wafer-Scale Porous Germanium Bilayer Structure Formation by Fast Bipolar Electrochemical Etching
Abstract Recently, porous Germanium (PGe) structures have gained significant attention as
a promising engineering material for a broad range of applications due to the versatility of its …
a promising engineering material for a broad range of applications due to the versatility of its …
[PDF][PDF] Faculté de génie Département de génie mécanique
Les cellules solaires commerciales composées d'un empilement d'éléments III-V cru sur
substrat de germanium (Ge) sont très largement utilisées dans le domaine industriel spatial …
substrat de germanium (Ge) sont très largement utilisées dans le domaine industriel spatial …
Anisotropic porous germanium nanostructures achieved with fast bipolar electrochemical etching and chemical etching
An anode for batteries having a columnar nanostructured porous germanium for its active
material. This nanostructured porous germanium can be produced with the novel etching …
material. This nanostructured porous germanium can be produced with the novel etching …