Ruthenium (Ru) is a next-generation metal interconnect material, and the demand for
precise etching is on the rise. This study explores anisotropic atomic layer etching (ALE) of …

The ignition process of a pulse modulated capacitively coupled argon discharge driven
simultaneously by two radio frequency voltages [12.5 MHz (high frequency) and 2.5 MHz …

In this study, we attempted to investigate individual effects of various plasma-related factors
(radical flux, ion flux and ion energy) on high aspect ratio etching characteristics of SiO2 with …

The behavior of ions in the plasma is an essential component in the process of industrial
etching. We studied the motions and energy distribution of argon ions in a inductively …

A potential source of particle contamination due to poorly maintained PECVD chamber
condition forces to perform in situ dry cleaning also actively employed before the wet …

Plasma etching is an essential semiconductor manufacturing technology required to enable
the current microelectronics industry. Along with lithographic patterning, thin-film formation …

RF gridded ion thrusters are simpler in construction than other gridded ion thrusters and
have been shown to be more robust for air-breathing electric propulsion and alternative …

In this short review, the evolution of plasma etching technologies used in microelectronics
fabrication since the discovery of the reactive ion etching process 50 years ago is explored …

Efficient and controlled delivery of radio-frequency (rf) power for semiconductor plasma
processing typically relies upon tunable matching networks to transform the variable plasma …

This dissertation is a synopsis of research publications on phenomenology and applications
of 3D plasma-sheath-lenses. It is demonstrated that the sheath surrounding electrodes …