Two-dimensional materials (2DMs) have gained significant interest for resistive-switching
memory toward neuromorphic and in-memory computing (IMC). To achieve atomic-level …

Human–machine interaction (HMI) technology has undergone significant advancements in
recent years, enabling seamless communication between humans and machines. Its …

Designing reliable and energy‐efficient memristors for artificial synaptic arrays in
neuromorphic computing beyond von Neumann architecture remains a challenge. Here …

As miniaturization of semiconductor memory devices is reaching its physical and
technological limits, there is a demand for memory technologies that operate on new …

van der Waals (vdW) multiferroic tunnel junctions (MFTJs) based on two-dimensional
materials have gained significant interest due to their potential applications in next …

In this work, the quasi-analog to discrete transition occurring in the current–voltage
characteristic of oxygen engineered yttrium oxide-based resistive random-access memory …

In this work, we present a study on the resistive memory properties of ITO/MEH-PPV/Al
devices. The pristine diode-like device, highly resistive, needs an electroforming process to …

Memristive devices have been demonstrated to exhibit quantum conductance effects at
room temperature. In these devices, a detailed understanding of the relationship between …

Herein, we propose high-performance Ti/STO/n+-Si and Ag/STO/n+-Si write-once-read-
many-times devices, where the resistance transition mechanisms are controlled by oxygen …

Advanced filamentary devices are crucial for developing low‐power devices to implement
high‐speed logic and neuromorphic devices. Among these, HfO2‐based filamentary …