Exploring the Advantages and Challenges of Fermat NTT in FHE Acceleration

A Kim, AC Mert, A Mukherjee, A Aikata… - Annual International …, 2024 - Springer
Recognizing the importance of a fast and resource-efficient polynomial multiplication in
homomorphic encryption, in this paper, we design a multiplier-less number theoretic …

A 3-nm FinFET 27.6-Mbit/mm Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking

Y Aoyagi, K Nii, M Yabuuchi, T Tanaka… - IEEE Journal of Solid …, 2024 - ieeexplore.ieee.org
A 3-nm FinFET single-port (SP) 6T SRAM macro is proposed that utilizes a far-end pre-
charge (FPC) circuit and weak-bit (WB) tracking circuit. These circuits can decrease write …

[HTML][HTML] Evaluation of various phase-transition materials for steep switching super-low power application in the latest technology node

H Jung, J Chang, J Jeon - Results in Physics, 2024 - Elsevier
Recently, a phase-transition field effect transistor (phase-FET) integrated with a phase-
transition material (PTM) is attracting attention as a steep switching device, and attempts to …

Osiris: A Systolic Approach to Accelerating Fully Homomorphic Encryption

A Ebel, B Reagen - arXiv preprint arXiv:2408.09593, 2024 - arxiv.org
In this paper we show how fully homomorphic encryption (FHE) can be accelerated using a
systolic architecture. We begin by analyzing FHE algorithms and then develop systolic or …