Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory
With the increasing demands and complexity of the neuromorphic computing schemes
utilizing highly efficient analog resistive switching devices, understanding the apparent …
utilizing highly efficient analog resistive switching devices, understanding the apparent …
Non-zero crossing current-voltage characteristics of interface-type resistive switching devices
A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique
non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully …
non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully …
[HTML][HTML] A facile solution processible self-rectifying and sub-1 V operating memristor via oxygen vacancy gradient within a TiO 2 single layer
Memristors are becoming increasingly recognized as candidates for neuromorphic devices
due to their low power consumption, non-volatile memory, and synaptic properties and the …
due to their low power consumption, non-volatile memory, and synaptic properties and the …
A promising neoteric nominee in memristor family (Li2ZnO2): Nonpinched current− voltage hysteresis loops and impedance analysis
MS El-Bana, IM El Radaf, MS Alkhalifah - Materials Science in …, 2024 - Elsevier
Great potential attention has been paid to memristors in the non-volatile memory market
where it could lead to novel forms of computing. Also, the metal-oxide-metal system is …
where it could lead to novel forms of computing. Also, the metal-oxide-metal system is …
Direct Integration of Monolayer WS2 with Lithographically Patterned Carbon Contacts for Memristor Application
Lithographically patterned carbon microelectrodes, owing to their light weight, excellent
thermal stability, chemical inertness, and good electrical conductivity, can be a suitable …
thermal stability, chemical inertness, and good electrical conductivity, can be a suitable …
A simple mathematical theory for Simple Volatile Memristors and their spiking circuits
In pursuit of neuromorphic (brain-inspired) devices, memristors (memory-resistors) have
emerged as promising candidates for emulating neuronal circuitry. Here we mathematically …
emerged as promising candidates for emulating neuronal circuitry. Here we mathematically …
Electrochemical synthesis and functional analysis of self-assembled Au-decorated polypyrrole for non-volatile memory and bio-inspired computing
RK Bhosale, SS Kundale, AR Shelake, HL Lokhande… - Organic …, 2024 - Elsevier
Functional and low-cost switching materials are necessary to sustain the development of
data storage and brain-inspired computing technologies. Polypyrrole (PPy) is one of the …
data storage and brain-inspired computing technologies. Polypyrrole (PPy) is one of the …
Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies
This investigation explores the resistive switching and energy storage capabilities of 100 nm
yttria-stabilized zirconia (YSZ) thin films in a metal-oxide-semiconductor (MOS) …
yttria-stabilized zirconia (YSZ) thin films in a metal-oxide-semiconductor (MOS) …
Improved performance for Ag nanoparticles-assisted HfO2 thin film-based memcapacitive device.
In this article, we have reported the deposition of Ag nanoparticles assisted HfO 2 thin film-
based device with an Au electrode using GLAD-assisted conventional electron beam …
based device with an Au electrode using GLAD-assisted conventional electron beam …
Coexistence of resistive capacitive and virtual inductive effects in memristive devices
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive)
effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or …
effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or …