Dimensional confinement has shown to be an effective strategy to tune competing degrees
of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal …

Epitaxial V 2 O 3 films, which undergo a metal–insulator transition at 155 K, exhibit a drastic
change in resistivity. Consequently, they are expected to be used in current-driven switching …

V 2 O 3, as a typical strongly correlated material, possesses great application value due to
its unique metal-insulator transition property. However, the difficulty of epitaxially growing …

The pressure‐driven Mott‐transition in Chromium doped V2O3 films is investigated by direct
electrical measurements on polycrystalline films with thicknesses down to 10 nm, and …

Resistive switching is the fundamental process that triggers the sudden change of the
electrical properties in solid-state devices under the action of intense electric fields. Despite …

Avalanche resistive switching is the fundamental process that triggers the sudden change of
the electrical properties in solid-state devices under the action of intense electric fields [1] …

This thesis deals with the growth, characterisation, and application of VO2 and V2O3 thin
films. Various methods were employed to prepare and analyze the VO2 and V2O3 films …