Electronic band structure of compressively strained Ge1− xSnx with x< 0.11 studied by contactle...

Design of Mid-Infrared Ge1-xSnx/Ge Heterojunction Photodetectors on GeSnOI Platform with a Bandwidth Exceeding 100 GHz

H Kumar, M Oehme - IEEE Journal of Selected Topics in …, 2024 - ieeexplore.ieee.org
This work presents normal-incidence p+-pnn+ Ge/Ge 1-x Sn x (x= 6-12%) heterojunction
photodetectors (PDs) on germanium-tin-on-insulator (GeSnOI) substrate for mid-infrared …
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