Fabrication of high aspect ratio AlN nanopillars by top-down approach combining plasma etching and wet etching
L Jaloustre, SS De Mello, S Labau… - Materials Science in …, 2024 - Elsevier
This study proposes a top-down approach for fabricating high aspect ratio AlN pillars with m-
oriented nonpolar sidewalls, which will serve as the first building block for the fabrication of …
oriented nonpolar sidewalls, which will serve as the first building block for the fabrication of …
Quasi‐atomic layer etching of silicon with surface chlorination and removal using Ar or He plasmas
N Kim, WK Kim, D Shin, JK Kim, CM Lee… - Plasma Processes …, 2024 - Wiley Online Library
A comparative study of argon (Ar) and helium (He) plasmas is conducted in quasi‐atomic
layer etching (ALE) processes for silicon (Si). The ALE window is identified to be between 35 …
layer etching (ALE) processes for silicon (Si). The ALE window is identified to be between 35 …
50 Years of Reactive Ion Etching in Microelectronics
S Voronin, C Vallée - IEEE Transactions on Materials for …, 2024 - ieeexplore.ieee.org
In this short review, the evolution of plasma etching technologies used in microelectronics
fabrication since the discovery of the reactive ion etching process 50 years ago is explored …
fabrication since the discovery of the reactive ion etching process 50 years ago is explored …