Atomic layer epitaxy of twinned TiN by hydrogen-manipulated tailoring on monolayer
This study demonstrates the atomic layer epitaxial growth of titanium nitride (TiN) with a
record-low resistivity (8.2× 1 0− 8 Ω∙ m) by hydrogen-manipulated chemical reaction on each …
record-low resistivity (8.2× 1 0− 8 Ω∙ m) by hydrogen-manipulated chemical reaction on each …
Novel Etch Solution with SYM3® for Logic Beol Patterning Etch Applications
H Sun, T Gao - 2024 Conference of Science and Technology …, 2024 - ieeexplore.ieee.org
With technology node shrinks in logic/foundry, patterning etch and Titanium Nitride (TiN)
Hard Mask Open (HMO) are facing increasing challenges on on-wafer performance and …
Hard Mask Open (HMO) are facing increasing challenges on on-wafer performance and …