Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace
FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in …

The electro-thermal performance of silicon nanosheet field-effect transistors (NSFETs) with
various parasitic bottom transistor (trpbt)-controlling schemes is evaluated. Conventional …

In this work, we propose a SiC-NSFET structure that uses a PTS scheme only under the
gate, with SiC layers under the source and drain, to improve the leakage current and thermal …

In this study, we propose a highly accurate and rapidly analyzable electrothermal modeling
for the observed self-heating effect (SHE) characteristics in multinanosheet FETs (mNS …

This study analyzes the single-event transient (SET) characteristics of alpha particles on
multi-channel Forksheet-FET and Nanosheet-FET at the device and circuit levels through 3D …

Complimentary FETs (C-FETs) enable aggressive standard cell height reduction, facilitating
on-target area scaling without shrinking contacted gate pitch (CGP). We extensively …

In the relentless pursuit of semiconductor device scaling, stacked silicon nanosheet gate-all-
around field-effect transistors (NSFETs) are emerging as key candidates for sub-3nm …

A novel and practicable partial punch-through-stopper (p-PTS) scheme beneath the gate
area is proposed for the substrate leakage current suppression in the gate-all-around (GAA) …