Fabrication of epitaxial V2O3 thin films on Al2O3 substrates via mist chemical vapor deposition
H Nishii, S Iida, A Yamasaki, T Ikenoue, M Miyake… - Journal of Crystal …, 2024 - Elsevier
Epitaxial V 2 O 3 films, which undergo a metal–insulator transition at 155 K, exhibit a drastic
change in resistivity. Consequently, they are expected to be used in current-driven switching …
change in resistivity. Consequently, they are expected to be used in current-driven switching …
Bulk‐Like Mott‐Transition in Ultrathin Cr‐Doped V2O3 Films and the Influence of its Variability on Scaled Devices
The pressure‐driven Mott‐transition in Chromium doped V2O3 films is investigated by direct
electrical measurements on polycrystalline films with thicknesses down to 10 nm, and …
electrical measurements on polycrystalline films with thicknesses down to 10 nm, and …