MA Breton, D Schmidt, A Greene… - Journal of Micro …, 2022 - spiedigitallibrary.org
Over the past several years, stacked nanosheet gate-all-around (GAA) transistors captured the focus of the semiconductor industry and have been identified as the lead architecture to …
RG Debnath, S Baishya - Semiconductor Science and …, 2022 - iopscience.iop.org
In this paper, a comparative study on process variability considering work function variation (WFV), random dopant fluctuation (RDF), and oxide thickness fluctuation (OTF) in epitaxial …
FGRG da Silva, RNM Oliveira, AL Zimpeck… - Integration, 2022 - Elsevier
This work analyzes a set of Full Adder circuits considering variability effects, comparing delay and energy consumption when operating at nominal voltage and near-threshold …
A drain current local variability compact model due to random fluctuation of channel length induced by line edge roughness/line width roughness (LER/LWR) is derived here. The …
U Mushtaq, MW Akram, D Prasad, A Islam… - Journal of Circuits …, 2024 - World Scientific
This research work focuses on implementation of the FinFET-based complementary metal- oxide-semiconductor (CMOS) Full Adder circuits for different transistor configurations using …