Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …

The present paper proposes an improved charge control model of lattice-mismatched
AlGaN/GaN HEMTs, valid over the entire operating region. The model for estimation of two …

Polarization dependent analysis for AlGaN/GaN HEMT has been done. The capacitance–
voltage characteristics of lattice mismatched AlGaN/GaN modulation doped field effect …

In this paper, we present a physics-based model for two-dimensional electron gas (2DEG)
sheet carrier density ns and various microwave characteristics such as transconductance …

A two‐dimensional analytical model for an AlGaN/GaN MODFET is presented. The model
assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and …

AlN interlayer's has been seen to be extensively used in AlGaN/GaN HEMT design to
improve the overall device characteristics. This article presents the enhancement in …

A carrier‐concentration‐dependent low‐field‐mobility model for a lattice‐matched
InAlAs/InGaAs/InP HEMT for microwave frequency applications is developed. The …

An analytical parasitic resistance dependent model for the current voltage characteristics for
InAlAs/InGaAs/InP HEMT is proposed. The model uses a new polynomial dependence of …

Higher frequency hetero-junction transistors called High Electron Mobility Transistors
(HEMTs) are employed in a number of high-power applications, including radiofrequency …

We have carried out a theoretical study of double-δ-doped InAlAs/InGaAs/InP high electron
mobility transistor (HEMT) by means of the finite differential method. The electronic states in …