Monoclinic β-Ga2O3, an ultra-wide bandgap semiconductor, has seen enormous activity in
recent years. However, the fundamental study of the plasmon–phonon coupling that dictates …

ABSTRACT β-Gallium oxide (β-Ga2O3) is an emerging wide bandgap semiconductor with
potential applications in power and RF electronic systems. Previous theoretical calculation …

We present Raman-scattering measurements on In x Ga 1− x N over the entire composition
range of the alloy. The frequencies of the A 1 (LO) and E 2 modes are reported and show a …

Micro-Raman imaging measurements of n-type 4 H-Si C crystals with graded donor
concentration were carried out, and spatial distributions of the free carrier concentration …

The thermoelectric effects in bulk β-gallium oxide crystals are investigated in this work using
the ab initio calculated electron-phonon interactions and semi-classical Boltzmann transport …

Light and matter can strongly mix together to form hybrid particles called polaritons. In recent
years, polaritons in the so-called ultrastrong coupling (USC) regime have attracted much …

The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …

For Raman-based carrier concentration determination in thin film semiconductors, above-
band-gap excitation is necessary, as the interference from underlying substrate is eliminated …

Photoluminescence, Raman scattering, and X-ray photoelectron spectroscopy have been
used to study the electronic structure of n-InP (100) surfaces modified with different sulfide …

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a
central topic in (opto-) electronics owing to device applications. InP could open new …