Atomic layer etching at the tipping point: an overview
GS Oehrlein, D Metzler, C Li - … Journal of Solid State Science and …, 2015 - iopscience.iop.org
The ability to achieve near-atomic precision in etching different materials when transferring
lithographically defined templates is a requirement of increasing importance for nanoscale …
lithographically defined templates is a requirement of increasing importance for nanoscale …
Pulsed plasma etching for semiconductor manufacturing
DJ Economou - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Power-modulated (pulsed) plasmas have demonstrated several advantages compared to
continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching …
continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching …
Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions
Current (and future) microelectronics fabrication requirements place unprecedented
demands on the fidelity of plasma etching. As device features shrink to atomic dimensions …
demands on the fidelity of plasma etching. As device features shrink to atomic dimensions …
[HTML][HTML] Thermal atomic layer etching: Mechanism, materials and prospects
C Fang, Y Cao, D Wu, A Li - Progress in Natural Science: Materials …, 2018 - Elsevier
In the semiconductors and related industries, the fabrication of nanostructures and
nanopatterns has become progressive demand for achieving near-atomic accuracy and …
nanopatterns has become progressive demand for achieving near-atomic accuracy and …
[HTML][HTML] Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features
Fabrication of semiconductor devices having three-dimensional (3D) structures places
unprecedented demands on plasma etching processes. Among these demands is the …
unprecedented demands on plasma etching processes. Among these demands is the …
Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation
The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …
distances were investigated using synchronously and asynchronously pulse modes in …
Influence of the carrier wafer during GaN etching in Cl2 plasma
T Meyer, C Petit-Etienne, E Pargon - Journal of Vacuum Science & …, 2022 - pubs.aip.org
In this study, we have performed a thorough characterization of the GaN surface after
etching up to 100 nm in Cl 2 plasma under various bias voltages and according to the carrier …
etching up to 100 nm in Cl 2 plasma under various bias voltages and according to the carrier …
Roadmap of ferroelectric memories: From discovery to 3D integration
The versatility of hafnium oxide-based ferroelectric memories to function as a storage class
memory, a synaptic device for neuromorphic implementation, and a device capable of high …
memory, a synaptic device for neuromorphic implementation, and a device capable of high …
Time-resolved ion flux, electron temperature and plasma density measurements in a pulsed Ar plasma using a capacitively coupled planar probe
M Darnon, G Cunge… - Plasma Sources Science …, 2014 - iopscience.iop.org
The resurgence of industrial interest in pulsed radiofrequency plasmas for etching
applications highlights the fact that these plasmas are much less well characterized than …
applications highlights the fact that these plasmas are much less well characterized than …
Pulsed Cl2/Ar inductively coupled plasma processing: 0D model versus experiments
E Despiau-Pujo, M Brihoum, P Bodart… - Journal of Physics D …, 2014 - iopscience.iop.org
Comparisons between measurements and spatially-averaged (0D) simulations of low-
pressure Ar and Cl 2 pulsed-plasmas in an industrial inductively coupled reactor are …
pressure Ar and Cl 2 pulsed-plasmas in an industrial inductively coupled reactor are …