State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Toward attojoule switching energy in logic transistors
Advances in the theory of semiconductors in the 1930s in addition to the purification of
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …
A review of the gate-all-around nanosheet FET process opportunities
S Mukesh, J Zhang - Electronics, 2022 - mdpi.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
Design optimization of three-stacked nanosheet FET from self-heating effects perspective
Self-heating effect (SHE) is a severe issue arising in the nanoscale field-effect transistors
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …
Analysis of self-heating effects in multi-nanosheet FET considering bottom isolation and package options
C Yoo, J Chang, Y Seon, H Kim… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Self-heating effects (SHEs) of multi-nanosheet FET (mNS-FET) at the 3-nm technology node
were analyzed at the device and circuit level considering the introduction of punchthrough …
were analyzed at the device and circuit level considering the introduction of punchthrough …
Optimization of structure and electrical characteristics for four-layer vertically-stacked horizontal gate-all-around Si nanosheets devices
Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu, G Wang, J Yao… - Nanomaterials, 2021 - mdpi.com
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
A critical review on performance, reliability, and fabrication challenges in nanosheet FET for future analog/digital IC applications
This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
New structure transistors for advanced technology node CMOS ICs
Q Zhang, Y Zhang, Y Luo, H Yin - National Science Review, 2024 - academic.oup.com
Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
Demonstration of a nanosheet FET with high thermal conductivity material as buried oxide: Mitigation of self-heating effect
Self-heating-induced thermal degradation is a severe issue in nonplanar MOS architectures.
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …
Total-ionizing-dose response of highly scaled gate-all-around Si nanowire CMOS transistors
Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …