The invention forms a graded modified layer in a Substrate by exposing the Substrate to
hydrogen plasma. Methyl groups may be removed from carbon doped oxide in the Substrate …

A method for forming a capping layer for improved adhesion with an underlying insulating
layer in a multiple layer semiconductor device manufacturing process including providing a …

(57) ABSTRACT A protective coating for a carbon-containing component comprises a
material Selected from the group consisting of non-Stoichiometric Silicon and carbon; non …

(54) METHOD TO DEPOSIT FUNCTIONALLY 6,486,082 B1 1 1/2002 Cho et al. GRADED
DELECTRIC FILMS VA 6,498,112 B1* 12/2002 Martin et al................ 438.763 CHEMICAL …

A method of fabricating a semiconductor device having an air-gapped multilayer
interconnect wiring structure is dis closed. After having formed a first thin film on or above a …

US6620724B1 - Low resistivity deep trench fill for DRAM and EDRAM applications - Google
Patents US6620724B1 - Low resistivity deep trench fill for DRAM and EDRAM applications …

(57) ABSTRACT A method of fabricating a semiconductor device having an air-gapped
multilayer interconnect wiring structure is dis closed. After having formed a first thin film on or …

A method of stripping an integrated circuit (IC) structure having a photoresist material and an
organosilicate glass (OSG) material is described. The method comprises feeding a nitrous …

Numerous embodiments of a method and apparatus for a sacrificial annealing layer are
disclosed. In one embodiment, a method of forming a sacrificial annealing layer for a …

A method of forming a graded dielectric layer on an underlying layer including flowing a
mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas …