J Yang, B Zhou, M Shen, T Lill, J Hoang - US Patent 9,870,899, 2018 - Google Patents
Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …
S Tan, J Yu, R Wise, N Shamma, Y Pan - US Patent 10,269,566, 2019 - Google Patents
Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer deposition and selective deposition are provided. Methods involve …
KJ Kanarik, S Tan, T Lill, M Shen, Y Pan… - US Patent …, 2018 - Google Patents
Methods of etching and smoothening films by exposing to a halogen-containing plasma and an inert plasma within a bias window in cycles are provided. Methods are suitable for …
S Tan, KIM Taeseung, W Yang, J Marks… - US Patent 9,806,252, 2017 - Google Patents
Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas …
D Shen, YJ Wang, RY Tong, V Sundar… - US Patent 10,522,749, 2019 - Google Patents
BACKGROUND A MTJ memory elementis also referred to as a MTJ nanopilarandis a key componentin magnetic recording devices, andin memory devices Such as magnetoresistive …
SSH Tan, W Yang, M Shen, RP Janek, J Marks… - US Patent …, 2016 - Google Patents
A method for etching a stack with an Ru containing layer disposed below a hardmask and above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is …
S Tan, KIM Taeseung, W Yang, J Marks… - US Patent 10,374,144, 2019 - Google Patents
Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas …
KJ Kanarik, J Marks, H Singh, S Tan… - US Patent …, 2017 - Google Patents
Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially …
P Agarwal, P Kumar, A Lavoie - US Patent 9,997,371, 2018 - Google Patents
Methods and apparatuses for patterning carbon-containing material over a layer to be etched are provided herein. Methods involve trimming carbon-containing material by atomic …