The mechanisms for silicon (Si) defect and nanocrystal related white and near-infrared electroluminescences (ELs) of Si-rich films synthesized by Si-ion implantation and plasma-enhanced chemical-vapor deposition (PECVD) are investigated. The strong photoluminescence (PL) of Si-ion-implanted at 415–455 nm contributed by weak-oxygen bond and neutral oxygen vacancy defects is observed after 1100 °C annealing for 180 min. The white-light EL of a reverse-biased metal-oxide-semiconductor (MOS) diode with a turn-on voltage of 3.3 V originates from the minority-carrier tunneling and recombination in the defect states of , which exhibits maximum EL power of 120 nW at bias of 15 V with a power–current slope of . The precipitation of nanocrystallite silicon (nc-Si) in is less pronounced due to relatively small excess Si density. In contrast, the 4-nm nc-Si contributed to PL and EL at about 760 nm is precipitated in the PECVD-grown Si-rich film after annealing at 1100 °C for 30 min. The indium-tin-oxide/Si-rich metal oxide semiconductor (MOS) diode is highly resistive with turn-on voltage and power-current slope of 86 V and , respectively. The decomposed EL peaks at 625 and 768 nm are contributed by the bias-dependent cold-carrier tunneling between the excited states in adjacent nc-Si quantum dots.
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1 May 2005
Research Article| April 20 2005
Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich
Gong-Ru Lin;
Gong-Ru Lin a)
Department of Photonics and Institute of Electro-Optical Engineering,
National Chiao Tung University
, 1001 Ta Hsueh Road, Hsinchu, Taiwan 300, Republic of China Search for other works by this author on:
Chun-Jung Lin;
Chun-Jung Lin
Department of Photonics and Institute of Electro-Optical Engineering,
National Chiao Tung University
, 1001 Ta Hsueh Road, Hsinchu, Taiwan 300, Republic of China Search for other works by this author on:
Chi-Kuan Lin;
Chi-Kuan Lin
Department of Photonics and Institute of Electro-Optical Engineering,
National Chiao Tung University
, 1001 Ta Hsueh Road, Hsinchu, Taiwan 300, Republic of China Search for other works by this author on:
Li-Jen Chou;
Li-Jen Chou
Department of Materials Science and Engineering,
National Tsing Hua University
, 101, Section 2 Kuang Fu Road, Hsinchu, Taiwan 300, Republic of China Search for other works by this author on:
Yu-Lun Chueh
Yu-Lun Chueh
Department of Materials Science and Engineering,
National Tsing Hua University
, 101, Section 2 Kuang Fu Road, Hsinchu, Taiwan 300, Republic of China Search for other works by this author on:
a)
Author to whom correspondance should be addressed; FAX: +886-3-5716631; electronic mail: grlin@faculty.nctu.edu.tw
J. Appl. Phys. 97, 094306 (2005)
Article history
Received:
July 29 2004
Accepted:
February 15 2005
Citation
Gong-Ru Lin, Chun-Jung Lin, Chi-Kuan Lin, Li-Jen Chou, Yu-Lun Chueh; Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich . J. Appl. Phys. 1 May 2005; 97 (9): 094306. https://doi.org/10.1063/1.1886274
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