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Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

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Abstract

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless (JL) double-gate (DG) field-effect transistors (FET) are presented. A regional method is used to solve the Poisson equation under different gate biases, and the electric potential is obtained. With the potential model, an analytical expression for the threshold voltage is achieved. An expression for the drain current is derived from the potential model. The analytical results are compared with simulations, and excellent agreements are observed. The models accurately describe the characteristics of JLDG FETs, and they are very helpful for the design and optimization of devices.

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Authors and Affiliations

  1. ASIC & System State Key Lab, School of Information Science and Technology, Fudan University, Shanghai, P. R. China, 200433

    Zhihao Ding, Guangxi Hu, Ran Liu & Lingli Wang

  2. School of Electronics and Information, Tongji University, Shanghai, P. R. China, 200092

    Shuyan Hu

  3. School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore

    Xing Zhou

Authors
  1. Zhihao Ding
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  2. Guangxi Hu
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  3. Ran Liu
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  4. Lingli Wang
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  5. Shuyan Hu
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  6. Xing Zhou
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Correspondence to Guangxi Hu.

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Ding, Z., Hu, G., Liu, R. et al. Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors. Journal of the Korean Physical Society 62, 1188–1193 (2013). https://doi.org/10.3938/jkps.62.1188

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  • DOI: https://doi.org/10.3938/jkps.62.1188

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