2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the
potential to be alternative channel materials for advanced 3D field-effect transistors, such as …

Because of the lack of contact and spacer doping techniques for two-dimensional (2D)
transistors, most high-performance 2D devices have been produced with nontypical …

Abstract 2D semiconductors have emerged as candidates for next‐generation electronics.
However, previously reported 2D transistors which typically employ the gate‐first process to …

Abstract 2D layered materials are regarded as prospective catalyst candidates due to their
advantageous atomic exposure ratio. Nevertheless, the predominant population of atoms …

Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant
attention due to their potential for next-generation electronics, which require device scaling …

Abstract Sodium selenium (Na-Se) batteries are considered promising candidates for next-
generation energy storage devices due to their high volumetric energy density. However, the …

The advancement of electronic technology has led to increasing research on performance
and stability. Continuous electrical pulse stimulation can cause crystal structure changes …

While two-dimensional (2D) materials have shown great promise for scaling technology
nodes beyond the limits of silicon devices, key challenges remain for realizing high-quality …

Abstract Two‐dimensional Materials (2DMs) offer significant promise for advancing device
miniaturization and extending Moore's law. Despite the challenges posed by high contact …

Two-dimensional (2D) semiconductors are considered one of the most promising channel
materials in devices for the future development of integrated circuits with low power …