First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
One of the fundamental properties of semiconductors is their ability to support highly tunable
electric currents in the presence of electric fields or carrier concentration gradients. These …
electric currents in the presence of electric fields or carrier concentration gradients. These …
Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAsBi
We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs
1-x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …
1-x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …
Bismuth-containing semiconductors GaAs1− xBix for energy conversion: Thermoelectric properties
AH Reshak - Materials Science in Semiconductor Processing, 2022 - Elsevier
The electronic transport properties of GaAs 1− x Bi x alloys, are obtained using the semi-
classical Boltzmann theory as incorporated in BoltzTraP code. The thermoelectric properties …
classical Boltzmann theory as incorporated in BoltzTraP code. The thermoelectric properties …
Bi-induced p-type conductivity in nominally undoped Ga (AsBi)
We report p-type conductivity in nominally undoped GaAs 1–x Bi x epilayers for a wide
range of Bi-concentrations (0.6%≤ x≤ 10.6%). The counterintuitive increase of the …
range of Bi-concentrations (0.6%≤ x≤ 10.6%). The counterintuitive increase of the …
Long-wavelength emission in photo-pumped GaAs1− xBix laser with low temperature dependence of lasing wavelength
T Fuyuki, R Yoshioka, K Yoshida… - Applied Physics …, 2013 - pubs.aip.org
This study demonstrates long-wavelength emission of up to 1204 nm in photo-pumped
GaAs 1− x Bi x lasers grown by molecular beam epitaxy under low temperature conditions …
GaAs 1− x Bi x lasers grown by molecular beam epitaxy under low temperature conditions …
Configuration dependence of band-gap narrowing and localization in dilute alloys
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for
experimental engineering of the band gap E g at low Bi concentrations (≤ 2%), in particular …
experimental engineering of the band gap E g at low Bi concentrations (≤ 2%), in particular …
Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and …
We investigate electronic transport properties of as-grown and annealed n-type modulation-
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
Characterization of a GaAs/GaAsBi pin solar cell
A Muhammetgulyyev, OG Erbas, B Kinaci… - Semiconductor …, 2019 - iopscience.iop.org
The structural and photovoltaic properties of the GaAs/GaAsBi pin solar cell with GaAs 0.983
Bi 0.017 active layer are investigated by optical and electrical measurement techniques. The …
Bi 0.017 active layer are investigated by optical and electrical measurement techniques. The …
Structural and optical characteristics of epitaxially grown AlGaAsBi on GaAs for potential application in ultra-low noise avalanche photodiodes
The recent addition of Bi to GaAs has been demonstrated to be an effective method for
reducing excess noise in avalanche photodiodes (APDs), owing to the significant decrease …
reducing excess noise in avalanche photodiodes (APDs), owing to the significant decrease …