Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
Comprehensive model of electron conduction in oxide-based memristive devices
C Funck, S Menzel - ACS Applied electronic materials, 2021 - ACS Publications
Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
Biomaterial-based nonvolatile resistive memory devices toward ecofriendliness and biocompatibility
Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of
leaving adverse effects on the environment due to the use of toxic and nondegradable …
leaving adverse effects on the environment due to the use of toxic and nondegradable …
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode
Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory
(RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent …
(RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent …
Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing
Memristors with controllable resistive switching (RS) characteristics gain significant attention
for neuromorphic computing applications in high-density memory and artificial synapses …
for neuromorphic computing applications in high-density memory and artificial synapses …
Energy efficient short-term memory characteristics in Ag/SnOx/TiN RRAM for neuromorphic system
O Kwon, J Shin, D Chung, S Kim - Ceramics International, 2022 - Elsevier
In this work, we demonstrate the short-term memory effects of an Ag/SnO x/TiN memristor
device using the spontaneous reset process for a neuromorphic system. The thickness and …
device using the spontaneous reset process for a neuromorphic system. The thickness and …
Ferroelectric ZrO 2 phases from infrared spectroscopy
We investigate ferroelectric thin films of ZrO2 experimentally and theoretically using infrared
(IR) absorption spectroscopy coupled with density functional theory (DFT) calculations. The …
(IR) absorption spectroscopy coupled with density functional theory (DFT) calculations. The …
Accurate inference with inaccurate RRAM devices: Statistical data, model transfer, and on-line adaptation
Resistive random-access memory (RRAM) is a promising technology for in-memory
computing with high storage density, fast inference, and good compatibility with CMOS …
computing with high storage density, fast inference, and good compatibility with CMOS …
Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device
Multilevel resistive switching in memristive devices is vital for applications in non-volatile
memory and neuromorphic computing. In this study, we report on the multilevel resistive …
memory and neuromorphic computing. In this study, we report on the multilevel resistive …
Memristive and artificial synapse performance by using TiOx/Al2O3 interface engineering in MoS2-based metallic filament memory
S Ginnaram, S Maikap - Journal of Physics and Chemistry of Solids, 2021 - Elsevier
The MoS 2 as a switching material has recently shown promising resistive switching
characteristics. In this work, we demonstrate the impact of TiO x/Al 2 O 3 interfacial layer on …
characteristics. In this work, we demonstrate the impact of TiO x/Al 2 O 3 interfacial layer on …